NCEP40P80G - P-Channel Super Trench Power MOSFET

NCE Power Semiconductor

NCEP40P80G Datasheet Preview — Preview of NCEP40P80G PDF

Datasheet Details

Part number	NCEP40P80G
Manufacturer	NCE Power Semiconductor
File Size	335.81 KB
Description	P-Channel Super Trench Power MOSFET
Datasheet	NCEP40P80G-NCEPowerSemiconductor.pdf

NCEP40P80G Product details

Description

The NCEP40P80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP40P80G NCEP40P80G DFN5X6-8L - - Absolute Maximum Ratin.

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Published: Dec 17, 2024 |