NCEP10N12 N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Description

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP10N12
Manufacturer: NCE Power Semiconductor
File Size: 413.19 KB
Datasheet: NCEP10N12-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

NCEP10N12 Distributors

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NCEP10N12 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

NCE Power Semiconductor NCEP10N12-like datasheet