NCEP095N10AG - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

NCEP095N10AG Datasheet Preview — Preview of NCEP095N10AG PDF

Datasheet Details

Part number	NCEP095N10AG
Manufacturer	NCE Power Semiconductor
File Size	328.72 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP095N10AG-NCEPowerSemiconductor.pdf

NCEP095N10AG Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =60A RDS(ON)=8.5mΩ , typical@ VGS=10V RDS(ON)=10.5mΩ , typical@ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P095N10AG NCEP095N10AG DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maxim.

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Published: Feb 3, 2025 |