NCEP068N10G - N-Channel Super Trench Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCEP068N10G
Manufacturer	NCE Power Semiconductor
File Size	356.84 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP068N10G Datasheet
Additional preview pages of the NCEP068N10G datasheet.

General

The NCEP068N10G uses Super Trench technology that is.
VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of.
Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
Very low on-resistance RDS(on) and synchronous rectification.
150 °C.

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Published: Jan 21, 2025 |