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NCE80T900F - N-Channel Super Junction Power MOSFET

Download the NCE80T900F datasheet PDF (NCE80T900D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel super junction power mosfet.

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)MAX ID 800 900 6 V mΩ A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCE80T900D-NCEPowerSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NCE80T900F
Manufacturer NCE Power Semiconductor
File Size 600.39 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE80T900F Datasheet

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Other Datasheets by NCE Power Semiconductor
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Full PDF Text Transcription

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NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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