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NCE65T1K2D - N-Channel Super Junction Power MOSFET

Download the NCE65T1K2D datasheet PDF. This datasheet also covers the NCE65T1K2 variant, as both devices belong to the same n-channel super junction power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCE65T1K2-NCEPowerSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NCE65T1K2D
Manufacturer NCE Power Semiconductor
File Size 594.15 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE65T1K2D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP.
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