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NCE6007S - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE6007S N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE6007S

Datasheet Details

Part number	NCE6007S
Manufacturer	NCE Power Semiconductor
File Size	412.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6007S Datasheet
Additional preview pages of the NCE6007S datasheet.

Product details

Description

The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |