NCE55H12 N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

Pb Free Product http://www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET .
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NCE55H12
Manufacturer: NCE Power Semiconductor
File Size: 393.19 KB
Datasheet: NCE55H12-NCEPowerSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

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NCE55H12 N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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