Datasheet4U Logo Datasheet4U.com

NCE4435 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

📥 Download Datasheet

Datasheet Details

Part number NCE4435
Manufacturer NCE Power Semiconductor
File Size 364.87 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4435 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCE4060K N-Channel 40V MOSFET VBsemi
NCE40H12K N-Channel MOSFET VBsemi
NCE4503 SOP8 Plastic-Encapsulate MOSFETS TY Semiconductor
NCE4614 Dual-Channel MOSFET VBsemi
NCE0103 N-Channel 100V MOSFET VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number Description
NCE4403 P-Channel Enhancement Mode Power MOSFET
NCE4007S P-Channel Enhancement Mode Power MOSFET
NCE4009S N-Channel Enhancement Mode Power MOSFET
NCE4012S N-Channel Enhancement Mode Power MOSFET
NCE4015S N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
NCE4435 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. D G General Features ● VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.
Published: |