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NCE4435 P-Channel Enhancement Mode Power MOSFET

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Description

NCE4435 NCE P-Channel Enhancement Mode Power MOSFET .
The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
NCE4435
Manufacturer
NCE Power Semiconductor
File Size
364.87 KB
Datasheet
NCE4435-NCEPowerSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired

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