The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
| Part number | NCE40P06S |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 367.64 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE40P06S Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| NCE4060K | N-Channel 40V MOSFET | VBsemi |
| NCE40H12K | N-Channel MOSFET | VBsemi |
| NCE4503 | SOP8 Plastic-Encapsulate MOSFETS | TY Semiconductor |
| NCE4614 | Dual-Channel MOSFET | VBsemi |
| NCE0103 | N-Channel 100V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| NCE40P06J | P-Channel Enhancement Mode Power MOSFET |
| NCE40P05S | P-Channel Enhancement Mode Power MOSFET |
| NCE40P05Y | P-Channel Enhancement Mode Power MOSFET |
| NCE40P07S | P-Channel Enhancement Mode Power MOSFET |
| NCE40P13S | P-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
