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NCE3402 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number NCE3402
Manufacturer NCE Power Semiconductor
File Size 240.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3402 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE3402 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.
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