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BF259 - High Voltage Power Transistors

Features

  •   Devices with breakdown voltages of 160V minimum.
  •   NPN Silicon High Voltage Power Transistors Absolute Maximum Ratings: (Ta = 25°C unless otherwise specified) Characteristic Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free A.

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Datasheet Details

Part number BF259
Manufacturer Multicomp
File Size 356.49 KB
Description High Voltage Power Transistors
Datasheet download datasheet BF259 Datasheet

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    High Voltage Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: •  Devices with breakdown voltages of 160V minimum •  NPN Silicon High Voltage Power Transistors Absolute Maximum Ratings: (Ta = 25°C unless otherwise specified) Characteristic Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free Air Junction to Case Symbol VCBO VCES VEBO IC ICM PD Tj, Tstg Rth(j-a) Rth(j-c) Value 300 5 100 300 1 5.7 5 28.57 -65 to +200 175 35 Unit V A W mW/°C °C °C/W www.element14.com www.farnell.com www.newark.
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