Description
The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical.
Features
- High temperature performance specified for: Reversed biased SOA with inductive loads. Switching time with inductive loads. Saturation voltages. Leakage currents. Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous - Peak
Base Current - Continuous - Peak
Emitter Current - Continuous - Peak
Total Power Dissipation at TC = 25°C at TC = 100°C Derate above 25°C
Operating and Storage J.
2N6547-Multicomp.pdf
