Description
This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings:
Collector-Base Voltage, Vcbo
: 120V
Collector-Emitter Voltage, Vceo
: 65V
Emitter-Base Voltage, Vebo
: 7V
Continuous Collector Current, Ic
: 1A
Total Device Dissipation (Ta = +25ºC), Pd
: 800mW
Derate above 25ºC
: 4.6mW/ºC
Total Device Dissipation (Tc = + 25ºC), Pd
: 5W
Derate above 25ºC
: 28.6mW/ºC
Operating Junction Temperature Range, Tj :.