Description
This is a silicon NPN transistor in a T0-39 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings:
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, lC Total Device Dissipation (TA= +25°C), PD
Derate above 25°C
Total Device Dissipation (TC = +25°C), PD Derate above 25°C
Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case.
2N1893-Multicomp.pdf
