Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
Features
- - P-Channel: -30V -4.2A
RDS(on)Typ=44mΩ@VGS = -4.5 V RDS(on))Typ= 54mΩ@VGS = -2.5V - Very Low On-resistance RDS(ON) - Low Crss
- Fast switching
- Improved dv/dt capability
D
SOT-23
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS PD R θJA TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Power Dissipation (TC = 25℃)
Thermal Resistance, Jun.
SLV3401T-Msemitek.pdf
