Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.
Features
- - 22A, 650V, RDS(on) =170mΩ@VGS = 10 V - Low gate charge(typ. Qg = 30.2nC) - High ruggedness Ultra - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220C
G DS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR
dv/dt
PD
TJ, TSTG
Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Cu.
SLP65R170E7-Msemitek.pdf
