Description
This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.
Features
- - N-Channel:100V 90A
RDS(on)Typ= 6.2mΩ@VGS = 10 V RDS(on)Typ= 8.6mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
G S
D-PAK
D
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS PD R θJC TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche.
SLD90N10G-Msemitek.pdf
