Datasheet Details
| Part number | SLD80N06T |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.10 MB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 SLD80N06T Datasheet
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Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - N-Channel:60V 80A RDS(on)Typ= 6.0 mΩ@VGS = 10V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Power Dissip.