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TP33N10E MTP33N10E

TP33N10E Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.

TP33N10E Features

* load; however, snubbing reduces switching losses. 5000 4500 4000 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 10 5 Ciss Crss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 0 VGS VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figur

TP33N10E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
TP33N10E
Manufacturer
Motorola
File Size
195.47 KB
Datasheet
TP33N10E_Motorola.pdf
Description
MTP33N10E

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MTP33N10E Motorola
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