TE53N50E Datasheet (Motorola)

TE53N50E, MTE53N50E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies, PWM motor contro

TE53N50E Features

* h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 60000 VDS =