PZT751T1 Datasheet (Motorola) - HIGH CURRENT PNP SILICON TRANSISTOR

PZT751T1, HIGH CURRENT PNP SILICON TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT751T1/D PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications.

The device is housed in the SOT 223 package which is designed for medium power surface mount applications.

High Current: 2.0 Amp The SOT 223 Package can be soldered using wave or reflow.

SOT 223 package ensures level mounting, resul

PZT751T1 Features

* n body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (