MTW35N15E Datasheet (Motorola)

MTW35N15E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applicati

MTW35N15E Features

* be safely operated into an inductive load; however, snubbing reduces switching losses. 10000 VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) 6000 Crss 4000 Ciss 2000 Crss 0 10 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VO