MTP75N05HD Datasheet (Motorola)

MTP75N05HD, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed

MTP75N05HD Features

* n the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 Coss 1000 0 10 5 VGS 0 VDS 5 1