MTP6N60E Datasheet (Motorola)

MTP6N60E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and com

MTP6N60E Features

* es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 10000 TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1000 1600 Crss Ciss 100