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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PNP General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSB710-RT1
Motorola Preferred Device
2 BASE
1 EMITTER
3 2
1
CASE 318D–04, STYLE 1 SC–59
MAXIMUM RATINGS (TA = 25°C) Rating
Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
DEVICE MARKING
CRX
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
IC IC(P)
Symbol PD TJ Tstg
Value – 60 – 50 – 7.0 – 500 –1.0
Max 200 150 – 55 ~ +150
Unit Vdc Vdc Vdc mAdc Adc
Unit mW °C °C
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
MSB710-RT1 Datasheet
