Datasheet4U Logo Datasheet4U.com

MRF967 - DUAL GATE GaAs FET

Download the MRF967 datasheet PDF (MRF966 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for dual gate gaas fet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF966-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • MRF961 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
  • MRF962 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
  • MRF962 - NPN SILICON RF TRANSISTOR (Advanced Semiconductor)
  • MRF965 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
  • MRF9002NR2 - RF Power FET (Freescale Semiconductor)
  • MRF9002R2 - RF Power Field Effect Transistor Array (Motorola Inc)
  • MRF901 - NPN SILICON RF TRANSISTOR (ASI)
  • MRF9030LR1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF9030MBR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF9030MBR1 - RF POWER FIELD EFFECT TRANSISTORS (Freescale Semiconductor)
Other Datasheets by Motorola
  • MRF966 - DUAL GATE GaAs FET
  • MRF901 - NPN Silicon High-Frequency Transistor
  • MRF9011 - NPN Silicon High-Frequency Transistor
  • MRF9011L - NPN Silicon High-Frequency Transistor
  • MRF9011LT1 - NPN Silicon High-Frequency Transistor
  • MRF9030LR1 - RF Power Field Effect Transistors
  • MRF9030LSR1 - RF Power Field Effect Transistors
  • MRF9030R1 - RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription

Click to expand full text
MAXIMUM RATINGS Rating Symbol MRF966 MRF967 Unit Drain-Source Voltage —Gate-Source Voltage Reverse —Gate-Source Voltage Forward Drain Current vDs V G1S VG1S VG2S id 10 -8.0 -8.0 + 1.0 + 1.0 60 10 -8.0 -8.0 + 1.0 + 1.0 60 Vdc Vdc Vdc mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C Junction Temperature Range Pd 350 3.5 350 mW 3.5 mW/'C Tj -65 to -65 to °C + 125 + 125 Storage Channel Temperature Tstg -65 to -65 to "C Range + 125 + 125 —Handling and Packaging MES devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MES devices should be observed.
Published: |