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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF650/D
NPN Silicon RF Power Transistor
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.
MRF650 Datasheet
