MRF587 Datasheet (Motorola) - NPN Silicon High Frequency Transistor

MRF587, NPN Silicon High Frequency Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor .

designed for use in high gain, low noise, ultra linear, tuned and wideband amplifiers.

Ideal for use in CATV, MATV, and instrumentation applications.

Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA High Power Gain GU(max) = 16.5 dB (Typ) @ f = 500 MHz Ion Implanted All Gold

MRF587 Features

* C1 3.12 cm C10 C2 C1, C2

* 470 pF Chip (Ceramic) C3, C4

* 0.018 µF Chip Capacitor C5, C6

* 0.1 µF Mylar C7, C8

* 1.0 µF, 25 Vdc Electrolytic C9

* 91 pF Mini

* Unelco (C9 Taped 3.68 cm from C9

* Collector Connection on TL4 as shown) C10