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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3010/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. D • Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45% @ 10 Watts • High Gain, Rugged Device • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances • Broadband Performance of This Device Makes It Ideal for Applications from 800 to 1700 MHz, Common–Source Class AB Operation. • Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A, Gain = 12.
MRF3010 Datasheet
