MRF281SR1 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF281SR1, RF POWER FIELD EFFECT TRANSISTORS

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz.

Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.

Specified Two Tone Performance @ 1930 MHz, 26 Volts Output Power 4 Watts PEP

MRF281SR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* S

* Parameter Characterization at High Bias Levels

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume