Datasheet4U Logo Datasheet4U.com

MRF19125S - RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF19125S datasheet PDF. This datasheet also covers the MRF19125 variant, as both devices belong to the same rf sub-micron mosfet line n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #10

Features

  • = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 IMD Gps -30 -35 1990 2000 12 1920 1930 1940 1950 1960 1970 1980 f,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF19125_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF19125R3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19060LR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19060LSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19085LR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF19085LSR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19125SR3 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19120 RF POWER FIELD EFFECT TRANSISTORS
MRF19120S RF POWER FIELD EFFECT TRANSISTORS
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Published: |