Datasheet4U Logo Datasheet4U.com

MRF175GU - N-CHANNEL MOS BROADBAND RF POWER FET

Features

  • s are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter.
  • terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operatin.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF175GU N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF175GV N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF175LU N-CHANNEL BROADBAND RF POWER FET Tyco Electronics
MRF175LV N-CHANNEL BROADBAND RF POWER FET Tyco Electronics
MRF171A MOSFET BROADBAND RF POWER FET Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF175LU N-CHANNEL BROADBAND RF POWER FET
MRF175LV N-CHANNEL BROADBAND RF POWER FET
MRF173 (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF173CQ (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF174 N-CHANNEL MOS BROADBAND RF POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Published: |