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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF174/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
• Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) • Excellent Thermal Stability, Ideally Suited For Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz
D
MRF174
125 W, to 200 MHz N–CHANNEL MOS BROADBAND RF POWER FET
. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
G S CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
MRF174 Datasheet
