MRF136 Datasheet (Motorola) - N-CHANNEL MOS BROADBAND RF POWER FETs

MRF136, N-CHANNEL MOS BROADBAND RF POWER FETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs .

designed for wideband large signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push pull configuration.

Guaranteed 28 Volt, 150 MHz Performance MRF136 MRF136Y Output Power = 15 Watts Output Power = 30 Watts Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ

MRF136 Features

* 5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 3.5 VDD = 28 V IDQ = 100 mA f = 400 MHz 40 35 30 25 20 15 10 5 0

* 4

* 3

* 1 1

* 2 0 2 VGS, GATE

* SOURCE VOLTAGE (VOLTS) 3 4 f = 400 MHz VDD = 28 V IDQ = 100 mA Pin = CONSTANT TYPICAL DEVICE SHOWN, VGS(th) = 3 V Figure 19.