MMSF7P03HD Datasheet (Motorola) - SINGLE TMOS POWER MOSFET

MMSF7P03HD, SINGLE TMOS POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7P03HD Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process.

HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Typical applications are dc dc c

MMSF7P03HD Features

* re inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3500 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 Coss 500 0