MMDF4P03HD Datasheet (Motorola)

MMDF4P03HD, Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF4P03HD/D Advance Information Medium Power Surface Mount Products MMDF4P03HD Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process.

Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Typical applications are dc

MMDF4P03HD Features

* ) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MMDF4P03HD VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) 7.0 QT 6.0 VGS 5.0 4.0 3.0 2.0 1.0 Q3 0 0 2.0 4.0 6.0 8.0 10 VDS 12 14 0 16 ID = 3 A TJ = 25°C 10 Q1 Q2 20 30 1000 VDD = 15 V ID = 3 A VGS = 10 V T