Datasheet4U Logo Datasheet4U.com

MMBTA70LT1 - Transistor

Features

  • f the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been co.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBTA70LT1 Transistor Leshan Radio Company
MMBTA70 PNP TRANSISTOR Samsung
MMBTA70 General Purpose Transistor Kexin
MMBTA05 NPN Small Signal Transistor Taiwan Semiconductor
MMBTA05 NPN Silicon Epitaxial Transistor SeCoS

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMBTA70 GENERAL PURPOSE TRANSISTOR
MMBTA05 DRIVER TRANSISTOR
MMBTA05LT1 Driver Transistors
MMBTA06 DRIVER TRANSISTOR
MMBTA06LT1 Driver Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA70LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBTA70LT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –40 –4.0 –100 2 EMITTER 1 3 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA70LT1 = M2C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.
Published: |