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MMBTA64LT1 - Transistors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA63LT1/D Darlington Transistors PNP Silicon COLLECTOR 3 BASE 1 MMBTA63LT1 MMBTA64LT1* *Motorola Preferred Device EMITTER 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA63LT1 = 2U; MMBTA64LT1 = 2V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD
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