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MMBR941LT1 - NPN Silicon Low Noise / High-Frequency Transistors

Features

  • excellent broadband linearity and is offered in a variety of packages.
  • Fully Implanted Base and Emitter Structure.
  • 9 Finger, 1.25 Micron Geometry with Gold Top Metal.
  • Gold Sintered Back Metal.
  • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel IC = 50 mA LOW NOISE HIGH.

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.
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