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MJH16006 - POWER TRANSISTORS

Features

  • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits.
  • Collector.
  • Emitter Voltage.
  • VCEV = 1000 Vdc.
  • Fast Turn.
  • Off Times 80 ns Inductive Fall Time.
  • 100_C (Typ) 120 ns Inductive Crossover Time.
  • 100_C (Typ) 800 ns Inductive Storage Time.
  • 100_C (Typ).
  • 100_C Performance Specified for: Reverse.
  • Biased SOA with Inductive Lo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH16006A/D Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.
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