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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 VCEO(sus) = 200 Vdc (Min) — MJH11020, 19 VCEO(sus) = 250 Vdc (Min) — MJH11022, 21 • Low Collector–Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.