Datasheet4U Logo Datasheet4U.com

MJD112 - SILICON POWER TRANSISTORS

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD112/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • • • • Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for TIP110–TIP117 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 2.
Published: |