Datasheet4U Logo Datasheet4U.com

MGP4N60ED Datasheet - Motorola

MGP4N60ED Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both .

MGP4N60ED Datasheet (131.48 KB)

Preview of MGP4N60ED PDF
MGP4N60ED Datasheet Preview Page 2 MGP4N60ED Datasheet Preview Page 3

Datasheet Details

Part number:

MGP4N60ED

Manufacturer:

Motorola

File Size:

131.48 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

MGP4N60E Insulated Gate Bipolar Transistor (Motorola)

MGP11N60E Insulated Gate Bipolar Transistor (Motorola)

MGP11N60ED Insulated Gate Bipolar Transistor (Motorola)

MGP14N60E Insulated Gate Bipolar Transistor (Motorola)

MGP15N35CL Internally Clamped N-Channel IGBT (ON)

MGP15N38CL Internally Clamped N-Channel IGBT (Motorola)

MGP15N40CL Internally Clamped N-Channel IGBT (ON)

MGP15N43CL Internally Clamped N-Channel IGBT (Motorola)

TAGS

MGP4N60ED Insulated Gate Bipolar Transistor Motorola

MGP4N60ED Distributor