MGP4N60ED Datasheet (Motorola) - Insulated Gate Bipolar Transistor

MGP4N60ED, Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

Its new 600 V IGBT technology is specifically suited for applications requiring both