Datasheet4U Logo Datasheet4U.com

MGP15N60U - Insulated Gate Bipolar Transistor

Features

  • s Center: 1.
  • 800.
  • 521.
  • 6274 Mfax™: RMFAX0@email. sps. mot. com.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGP15N35CL Internally Clamped N-Channel IGBT ON
MGP15N40CL Internally Clamped N-Channel IGBT ON
MGP19N35CL IGBT ON Semiconductor
MGP3006 GHz PLL with I2C Bus and Four Chip Addresses Siemens
MGP3006 GHz PLL with I2C Bus and Four Chip Addresses Siemens

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MGP15N38CL Internally Clamped N-Channel IGBT
MGP15N43CL Internally Clamped N-Channel IGBT
MGP11N60E Insulated Gate Bipolar Transistor
MGP11N60ED Insulated Gate Bipolar Transistor
MGP14N60E Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP15N60U/D Product Preview Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies. • • • • • Industry Standard TO–220 Package High Speed Eoff: 67 mJ/A typical at 125°C Low On–Voltage – 1.7 V typical at 8.
Published: |