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MBR3045ST - SWITCHMODE Power Rectifier

Features

  • Dual Diode Construction.
  • Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
  • 45 V Blocking Voltage.
  • Low Forward Voltage Drop.
  • Guardring for Stress Protection.
  • 150°C Operating Junction Temperature.
  • Guaranteed Reverse Avalanche Mechanical Characteristics.
  • Case: Epoxy, Molded.
  • Weight: 1.9 grams (approximately).
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Rea.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR3045ST/D Advance Information SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltage Drop • Guardring for Stress Protection • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.
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