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MBR2535CTL - SWITCHMODE Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
  • Very Low Forward Voltage (0.55 V Maximum @ 25 Amps).
  • Matched Dual Die Construction (12.5 A per Leg or 25 A per Package).
  • Guardring for Stress Protection.
  • Highly Stable Oxide Passivated Junction (125°C Operating Junction Temperature).
  • Epoxy Meets U.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2535CTL/D SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. • Very Low Forward Voltage (0.55 V Maximum @ 25 Amps) • Matched Dual Die Construction (12.5 A per Leg or 25 A per Package) • Guardring for Stress Protection • Highly Stable Oxide Passivated Junction (125°C Operating Junction Temperature) • Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.
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