The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BCY58 BCY59
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol
VCEO VCES
BCY BCY 58 59
32 45
32 45
VEBO
ic
PD
pd
7 0.2 0.6 2.28
1
6.67
Tj. T stg -65 to +200
Symbol
Rfljc
R#ja
Max
150 450
Unit
Vdc Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
BCY58 Datasheet
