2N960 Datasheet (Motorola) - PNP germanium epitaxial mesa transistors

2N960, PNP germanium epitaxial mesa transistors

2N956 For Specifications, See 2N718A Data.

2N960 (GERMANIUM) 2N961 2N962 2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE 2N965 2N966 PNP germanium epitaxial mesa transistors for highspeed switching applications.

CASE 22 (TO 18) Collector connected to case MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and storage Ju