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2N6388 - NPN SILICON POWER TRANSISTORS

Download the 2N6388 datasheet PDF (2N6387 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon power transistors.

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Note: The manufacturer provides a single datasheet file (2N6387_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D Plastic Medium-Power Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage – @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6387 VCEO(sus) = 80 Vdc (Min) — 2N6388 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 5.
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